Memory system and operating method thereof

ABSTRACT

A memory system includes a memory device of lower read operation speed; a memory cache of higher read operation speed; and a controller suitable for: setting one of access patterns to the memory device defined by pairs of former and latter addresses provided to the memory system within a set input time interval as a prefetch pattern; performing a prefetch operation of caching data corresponding to the latter address from the memory device to the memory cache according to the prefetch pattern; and reading the cached data from the memory cache in response to a read command provided with the latter address of the prefetch pattern.

CROSS-REFERENCE TO RELATED APPLICATION(S)

The present application claims priority of Korean Patent Application No. 10-2015-0107989, flied on Jul. 30, 2015, which is incorporated herein by reference in its entirety.

BACKGROUND

1. Field

Various embodiments of the present invention relate generally to semiconductor design technology, and more particularly, to a memory system performing a prefetch operation and an operating method thereof.

2. Description of the Related Art

The computer environment paradigm has shifted to ubiquitous computing systems that can be used anytime and anywhere. As a result use of portable electronic devices such as mobile phones, digital cameras, and notebook computers continues to increase rapidly. Portable electronic devices generally use a memory system having a semiconductor memory device used as a data storage device. The data storage devices are used as main or auxiliary memory devices of a portable electronic device.

Data storage devices using memory devices provide excellent stability, durability, high information access speed, and low power consumption, since they have no moving parts. Examples of data storage devices having such advantages include universal serial bus (USB) memory devices, memory cards having various interfaces, and solid state drives (SSD).

SUMMARY

Various embodiments are directed to a memory system capable of caching data in a memory cache prior to an access to a memory device according to an access pattern to the memory device, and an operating method thereof.

According to an embodiment, a memory system is provided, the memory system may include a memory device of lower read operation speed; a memory cache of higher read operation speed; and a controller suitable for: setting at least one access pattern defined by a pair of former and latter addresses as a prefetch pattern; performing a prefetch operation including caching data corresponding to the latter address from the memory device to the memory cache according to the prefetch pattern; and reading the cached data from the memory cache in response to a read command provided with the latter address of the prefetch pattern.

The access pattern selected as the prefetch pattern may include information denoting a number of access operations performed according to the former address that is greater than a reference number.

The access operation performed according to the former address may be one of program or a read operation.

Each of the number of access operations performed according to the former address may be followed by a read operation performed according to the latter address.

The controller may perform the prefetch operation in case of performing an access operation according to the former address of the prefetch pattern.

The controller further may store the prefetch pattern in a page buffer of the memory device.

The controller may store the prefetch pattern according to a weighted value of the prefetch pattern.

The weighted value of the prefetch pattern may be determined on the basis of input frequency of the prefetch pattern.

The weighted value of the prefetch pattern may be determined on the basis of input recency of the prefetch pattern.

The controller may further remove from the memory cache the prefetch pattern and the corresponding cached data, which are not provided during a predetermined amount of time.

In an embodiment, an operating method of a memory system including a memory device having a lower read operation speed and a memory cache of higher read operation speed, the method may include setting at least one of a plurality of access patterns to the memory device defined by pairs of former and latter addresses provided to the memory system within a set input time interval as a prefetch pattern; performing a prefetch operation including caching data corresponding to the latter address from the memory device to the memory cache according to the prefetch pattern; and reading the cached data from the memory cache in response to a read command provided with the latter address of the prefetch pattern.

The prefetch pattern may include information of a number of access operations performed according to the former address that is greater than a reference number.

The access operation performed according to the former address may be one of program and read operations.

Each of the number of access operations performed according to the former address may be followed by a read operation performed according to the latter address.

The prefetch operation may be performed in case of performing an access operation according to the former address of the prefetch pattern.

The operating method may further include storing the prefetch pattern in a page buffer of the memory device.

The storing of the prefetch pattern may be performed according to a weighted value of the prefetch pattern.

The weighted value of the prefetch pattern may be determined on the basis of input frequency of the prefetch pattern.

The weighted value of the prefetch pattern may be determined on the basis of input recency of the prefetch pattern.

The operating method may further include removing from the memory cache the prefetch pattern and the corresponding cached data, which are not provided during a predetermined amount of time.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a data processing system including a memory system, according to an embodiment of the invention.

FIG. 2 is a diagram illustrating a memory device, according to an embodiment of the invention.

FIG. 3 is a circuit diagram illustrating a memory block in a memory device, according to an embodiment of the present invention.

FIGS. 4 to 11 are diagrams schematically illustrating various aspects of a memory device as shown in FIG. 2, according to an embodiment of the present invention.

FIG. 12 is a diagram illustrating a prefetch operation of the memory system, according to an embodiment of the present invention.

FIG. 13 is a diagram illustrating a prefetch operation of a memory system as shown in FIG. 12, according to an embodiment of the present invention.

DETAILED DESCRIPTION

Various embodiments are described below with reference to the accompanying drawings. It should be understood, however, that the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. It is noted, that throughout the disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the present invention.

Also, the drawings are not necessarily to scale and, in some instances, proportions may have been exaggerated in order to clearly illustrate features of the embodiments. Moreover, when an element is referred to as being connected or coupled to another element, it should be understood that the former can be directly or indirectly connected or coupled to the latter including being electrically connected as may be needed, such as for example, being electrically connected or coupled to the latter with or without an intervening element therebetween.

Referring to FIG. 1, a data processing system 100 is provided, according to an embodiment of the invention. The data processing system 100 may include a host 102 and a memory system 110.

The host 102 may include any suitable electronic device. For example, the host 102 may include a portable electronic device such as a mobile phone, an MP3 player, a laptop computer and the like. The host may include a non-portable electronic device such as a desktop computer, a game player, a TV, a projector and the like.

The memory system 110 may operate in response to a request from the host 102. For example, the memory system may store data to be accessed by the host 102. The memory system 110 may be used as a main memory system or an auxiliary memory system of the host 102. The memory system 110 may be implemented with any suitable storage device, according to the protocol of a host interface electrically coupled with the host 102. One or more semiconductor memory devices may be used. Volatile or non-volatile memory devices may be used. For example, the memory system 110 may be implemented with a solid state drive (SSD), a multimedia card (MMC), an embedded MMC (eMMC), a reduced size MMC (RS-MMC) and a micro-MMC, a secure digital (SD) card, a mini-SD and a micro-SD, a universal serial bus (USB) storage device, a universal flash storage (UFS) device, a compact flash (CF) card, a smart media (SM) card, a memory stick, and the like.

The storage devices for the memory system 110 may be implemented with a volatile memory device, such as a dynamic random access memory (DRAM) and a static random access memory (SRAM) or a nonvolatile memory device such as a read only memory (ROM), a mask ROM (MROM), a programmable ROM (PROM), an erasable programmable ROM (EPROM), an electrically erasable programmable ROM (EEPROM), a ferroelectric random access memory (FRAM), a phase change RAM (PRAM), a magnetoresistive RAM (MRAM), a resistive RAM (RRAM) and the like.

The memory system 110 may include a memory device 150 which stores data to be accessed by the host 102, and a controller 130 which may control storage of data in the memory device 150.

The controller 130 and the memory device 150 may be integrated into a single semiconductor device. For instance, the controller 130 and the memory device 150 may be integrated into one semiconductor device configured as a solid state drive (SSD). Configuring the memory system 110 as an SSD, may generally allow a significant increase in the operation speed of the host 102.

The controller 130 and the memory device 150 may be integrated into a single semiconductor device configured as a memory card, such as a Personal Computer Memory Card International Association (PCMCIA) card, a compact flash (CF) card, a smart media (SM) card (SMC), a memory stick, a multimedia card (MMC), an RS-MMC and a micro-MMC, a secure digital (SD) card, a mini-SD, a micro-SD and an SDHC, a universal flash storage (UFS) device and the like.

Also, for example, the memory system 110 may be or configure a computer, an ultra-mobile PC (UMPC), a workstation, a net-book, a personal digital assistant (PDA), a portable computer, a web tablet, a tablet computer, a wireless phone, a mobile phone, a smart phone, an e-book, a portable multimedia player (PMP), a portable game player, a navigation device, a black box, a digital camera, a digital multimedia broadcasting (DMB) player, a three-dimensional (3D) television, a smart television, a digital audio recorder, a digital audio player, a digital picture recorder, a digital picture player, a digital video recorder, a digital video player, a storage configuring a data center, a device capable of transmitting and receiving information under a wireless environment, one of various electronic devices configuring a home network, one of various electronic devices configuring a computer network, one of various electronic devices configuring a telematics network, an RFID device, or one of various component elements configuring a computing system.

The memory device may store data provided from the host 102 during a write operation, and provide the stored data to the host 102 during a read operation. The memory device 150 may include one or more memory blocks 152, 154 and 156. Each of the memory blocks 152, 154 and 156 may include a plurality of pages. Each of the pages may include a plurality of memory cells to which a plurality of word lines (WL) may be electrically coupled. The memory device 150 may be a nonvolatile memory device retaining stored data when power supply is interrupted. According to an embodiment the memory device may be a flash memory. The memory device may be a flash memory device having a three-dimensional (3D) stack structure. An example of a non-volatile memory device 150 having a three-dimensional (3D) stack structure is described later herein with reference to FIGS. 2 to 11.

The controller 130 of the memory system 110 may control the memory device 150 in response to a request from the host 102. The controller 130 may provide data read from the memory device 150, to the host 102, and store the data provided from the host 102 into the memory device 150. To this end, the controller 130 may control overall operations of the memory device 150, such as read, write, program and erase operations.

Any suitable controller may be used. For example, the controller 130 may include a host interface unit 132, a processor 134, an error correction code (ECC) unit 138, a power management unit 140, a NAND flash controller 142, and a memory 144.

The host interface unit 132 may process commands and/or data provided from the host 102. The host interface unit 132 may communicate with the host 102 through at least one of various interface protocols such as universal serial bus (USB), multimedia card (MMC), peripheral component interconnect-express (PCI-E), serial attached SCSI (SAS), serial advanced technology attachment (SATA), parallel advanced technology attachment (PATA), small computer system interface (SCSI), enhanced small disk interface (ESDI), integrated drive electronics (IDE) and the like.

The ECC unit 138 may detect and correct errors in the data read from the memory device 150 during a read operation. Various detection and correction techniques may be employed. For example, the ECC unit 138 may not correct error bits when the number of the error bits is greater than or equal to a threshold number of correctable error bits, and may output an error correction fail signal indicating failure in correcting the error bits.

The ECC unit 138 may perform an error correction operation based on a coded modulation such as a low density parity check (LDPC) code, a Bose-Chaudhuri-Hocquenghem (BCH) code, a turbo code, a Reed-Solomon (RS) code, a convolution code, a recursive systematic code (RSC), a trellis-coded modulation (TCM), a Block coded modulation (BCM), and the like. The ECC unit 138 may include any and all suitable circuits, systems or devices required for an error detection and correction operation.

The PMU 140 may provide and manage power for the controller 130, that is, power for the component elements included in the controller 130.

The NFC 142 may serve as a memory interface between the controller 130 and the memory device 150 to allow the controller 130 to control the memory device 150 in response to a request from the host 102. The NFC 142 may generate control signals for the memory device 150. The NFC may process data under the control of the processor 134, for example when the memory device 150 is a flash memory and, in particular, when the memory device 150 is a NAND flash memory.

The memory 144 may serve as a working memory of the memory system 110 and the controller 130, and store data for driving the memory system 110 and the controller 130. The controller 130 may control the memory device 150 in response to a request from the host 102. For example, the controller 130 may provide the data read from the memory device 150 to the host 102 and store the data provided from the host 102 in the memory device 150. When the controller 130 controls the operations of the memory device 150, the memory 144 may store data used by the controller 130 and the memory device 150 for such operations as read, write, program and erase operations.

The memory 144 may be implemented with volatile memory. For example, the memory 144 may be implemented with a static random access memory (SRAM) or a dynamic random access memory (DRAM). As described above, the memory 144 may store data used by the host 102 and the memory device 150 for the read and write operations. To store the data, the memory 144 may include a program memory, a data memory, a write buffer, a read buffer, a map buffer, and so forth.

The processor 134 may control one or more general operations of the memory system 110. The processor 134 may control a write operation or a read operation for the memory device 150, in response to a write request or a read request from the host 102. The processor 134 may drive firmware, which is referred to as a flash translation layer (FTL), to control the general operations of the memory system 110. The processor 134 may be implemented with a microprocessor. The processor may be implemented with a central processing unit (CPU).

A management unit (not shown) may be included in the processor 134, and may perform, for example, bad block management of the memory device 150. Accordingly, the management unit may find bad memory blocks included in the memory device 150, which are in unsatisfactory condition for further use, and perform bad block management on the bad memory blocks. When the memory device 150 is a flash memory, for example, a NAND flash memory, a program failure may occur during a write operation due to characteristics of a NAND logic function. Bad block management may program the data of the program-failed memory block or the bad memory block into a new memory block. Bad blocks due to a program fail may deteriorate the utilization efficiency of a memory device, especially one having a 3D stack structure and thus negatively affect the reliability of the memory system 100.

Referring to FIG. 2, according to an embodiment, the memory device 150 may include a plurality of memory blocks, for example, zeroth to (N−1)^(th) blocks 210 to 240. Each of the plurality of memory blocks 210 to 240 may include a plurality of pages, for example, 2^(M) number of pages (2^(M) PAGES). Each of the plurality of pages may include a plurality of memory cells to which a plurality of word lines are electrically coupled.

The memory blocks may be single level cell (SLC) memory blocks or multi-level cell (MLC) memory blocks, according to the number of bits which may be stored or expressed in each memory cell. The SLC memory block may include a plurality of pages which are implemented with memory cells each capable of storing 1-bit data. The MLC memory block may include a plurality of pages which are implemented with memory cells each capable of storing multi-bit data, for example, two or more-bit data. A MLC memory block including a plurality of pages which are implemented with memory cells that are each capable of storing 3-bit data may be employed and will be referred to as a triple level cell (TLC) memory block.

Each of the plurality of memory blocks 210 to 240 may store data provided from the host device 102 during a write operation, and may provide stored data to the host 102 during a read operation.

Referring to FIG. 3, a memory block 152 of the memory device 150 may include a plurality of cell strings 340 which are electrically coupled to bit lines BL0 to BLm−1, respectively. The cell string 340 of each column may include at least one drain select transistor DST and at least one source select transistor SST. A plurality of memory cells or a plurality of memory cell transistors MC0 to MCn−1 may be electrically coupled in series between the select transistors DST and SST. The respective memory cells MC0 to MCn−1 may be configured by multi-level cells (MLC) each of which stores data information of a plurality of bits. The strings 340 may be electrically coupled to the corresponding bit lines BL0 to BLm−1, respectively. For reference, in FIG. 3, ‘DSL’ denotes a drain select line, ‘SSL’ denotes a source select line, and ‘CSL’ denotes a common source line.

While the memory block 152 is configured by NAND flash memory cells, it is to be noted that the memory block 152 may be realized, in other embodiments, by NOR flash memory, hybrid flash memory in which at least two kinds of memory cells are combined, or one-NAND flash memory in which a controller is built in a memory chip. Also, the operational characteristics of a semiconductor device may be applied to not only a flash memory device in which a charge storing layer is configured by conductive floating gates but also to a charge trap flash (CTF) in which a charge storing layer is configured by a dielectric layer.

A voltage supply block 310 of the memory device 150 may provide word line voltages, for example, a program voltage, a read voltage or a pass voltage, to be supplied to respective word lines according to an operation mode. The voltage supply block 310 may provide voltages to be supplied to bulks, for example, well regions in which the memory cells are formed. The voltage supply block 310 may perform a voltage generating operation under the control of a control circuit (not shown). The voltage supply block 310 may generate a plurality of variable read voltages to generate a plurality of read data, select one of the memory blocks or sectors of a memory cell array under the control of the control circuit, select one of the word lines of the selected memory block, and provide the word line voltages to the selected word line and unselected word lines.

A read/write circuit 320 of the memory device 150 may be controlled by the control circuit, and may serve as a sense amplifier or a write driver according to an operation mode. During a verification/normal read operation, the read/write circuit 320 may serve as a sense amplifier for reading data from the memory cell array. Also, during a program operation, the read/write circuit 320 may serve as a write driver which drives bit lines according to data to be stored in the memory cell array. The read/write circuit 320 may receive data to be written in the memory cell array, from a buffer (not shown), during the program operation, and may drive the bit lines according to the inputted data. To this end, the read/write circuit 320 may include a plurality of page buffers 322, 324 and 326 respectively corresponding to columns (or bit lines) or pairs of columns (or pairs of bit lines), and a plurality of latches (not shown) may be included in each of the page buffers 322, 324 and 326.

FIGS. 4 to 11 are schematic diagrams illustrating various aspects of a memory device 150.

As shown in FIGS. 4 to 11, the memory device 150 may include a plurality of memory blocks BLK0 to BLKN−1, and each of the memory blocks BLK0 to BLKN−1 may be realized in a three-dimensional (3D) structure or a vertical structure. The respective memory blocks BLK0 to BLKN−1 may include structures which extend in first to third directions, for example, an x-axis direction, a y-axis direction and a z-axis direction.

The respective memory blocks BLK0 to BLKN−1 may include a plurality of NAND strings NS which extend in the second direction (FIG. 8). The plurality of NAND strings NS may be provided in the first direction and the third direction. Each NAND string NS may be electrically coupled to a bit line BL, at least one source select line SSL, at least one ground select line GSL, a plurality of word lines WL, at least one dummy word line DWL, and a common source line CSL. The respective memory blocks BLK0 to BLKN−1 may be electrically coupled to a plurality of bit lines BL, a plurality of source select lines SSL, a plurality of ground select lines GSL, a plurality of word lines WL, a plurality of dummy word lines DWL, and a plurality of common source lines CSL.

FIG. 5 is a perspective view of one memory block BLKi of the plurality memory blocks BLK0 to BLKN−1 shown in FIG. 4. FIG. 6 is a cross-sectional view taken along a line I-I′ of the memory block BLKi shown in FIG. 5.

Referring to FIGS. 5 and 6, memory block BLKi may include a structure which extends in the first to third directions.

The memory block may include a substrate 5111 including a silicon material doped with a first type impurity. For example, the substrate 5111 may include a silicon material doped with a p-type impurity or may be a p-type well, for example, a pocket p-well, and include an n-type well which surrounds the p-type well. While in the embodiment shown it is assumed that the substrate 5111 is p-type silicon, it is to be noted that the substrate 5111 is not limited to being p-type silicon.

A plurality of doping regions 5311 to 5314 which extend in the first direction may be provided over the substrate 5111. The doping regions are spaced apart at regular intervals in the third direction. The plurality of doping regions 5311 to 5314 may contain a second type of impurity that is different from the impurity used in substrate 5111. For example, the plurality of doping regions 5311 to 5314 may be doped with an n-type impurity. While it is assumed here that first to fourth doping regions 5311 to 5314 are n-type, it is to be noted that the first to fourth doping regions 5311 to 5314 are not limited to being n-type.

In the region over the substrate 5111 between the first and second doping regions 5311 and 5312, a plurality of dielectric material regions 5112 which extend in the first direction may be spaced apart at regular intervals in the second direction. The dielectric material regions 5112 and the substrate 5111 may also be separated from one another by a predetermined distance in the second direction. The dielectric material regions 5112 may include any suitable dielectric material such as, for example, silicon oxide.

In the regions over the substrate 5111 between two consecutive doping regions, for example, between doping regions 5311 and 5312, a plurality of pillars 5113 are spaced apart at regular intervals in the first direction. The pillars 5113 extend in the second direction and may pass through the dielectric material regions 5112 so that they may be electrically coupled with the substrate 5111. Each pillar 5113 may include one or more materials. For example, each pillar 5113 may include an in inner layer 5115 and an outer surface layer 5114. The surface layer 5114 may include a doped silicon material doped with an impurity. For example, the surface layer 5114 may include a silicon material doped with the same or same type impurity as the substrate 5111. While it is assumed here, as an example, that the surface layer 5114 may include p-type silicon, the surface layer 5114 is not limited to being p-type silicon and other embodiments may readily envisaged by the skilled person wherein the substrate 5111 and the surface layer 5114 of the pillars 5113 may be doped with an n-type impurity.

The inner layer 5115 of each pillar 5113 may be formed of a dielectric material. The Inner layer 5115 may be or include a dielectric material such as, for example, silicon oxide.

In the regions between the first and second doping regions 5311 and 5312, a dielectric layer 5116 may be provided along the exposed surfaces of the dielectric material regions 5112, the pillars 5113 and the substrate 5111. The thickness of the dielectric layer 5116 may be less than one half of the distance between the dielectric material regions 5112. In other words, a region in which a material other than the dielectric material 5112 and the dielectric layer 5116 may be disposed, may be provided between (i) the dielectric layer 5116 (provided over the bottom surface of a first dielectric material of the dielectric material regions 5112) and (ii) the dielectric layer 5116 provided over the top surface of a second dielectric material of the dielectric material regions 5112. The dielectric material regions 5112 lie below the first dielectric material.

In the regions between consecutive doping regions such as in the region between the first and second doping regions 5311 and 5312, a plurality of conductive material regions 5211 to 5291 may be provided over the exposed surface of the dielectric layer 5116. The plurality of the conductive material regions extend in the first direction and are spaced apart at regular intervals in the second direction in an interleaving configuration with the plurality of the dielectric material regions 5112. The dielectric layers 5116 fill the space between the conductive material regions and the dielectric material regions 5112. So for example, the conductive material region 5211 which extends in the first direction may be provided between the dielectric material region 5112 adjacent to the substrate 5111 and the substrate 5111. In particular, the conductive material region 5211 which extends in the first direction may be provided between (i) the dielectric layer 5116 disposed over the substrate 5111 and (ii) the dielectric layer 5116 disposed over the bottom surface of the dielectric material region 5112 adjacent to the substrate 5111.

Each of the conductive material regions 5211 to 5291 which extends in the first direction may be provided between (i) a dielectric layer 5116 disposed over the top surface of one of the dielectric material regions 5112 and (ii) the dielectric layer 5116 disposed over the bottom surface of the next dielectric material region 5112. The conductive material regions 5221 to 5281 which extend in the first direction may be provided between the dielectric material regions 5112. The conductive material region 5291 which extends in the first direction may be provided over the uppermost dielectric material 5112. The conductive material regions 5211 to 5291 which extend in the first direction may be or include a metallic material. The conductive material regions 5211 to 5291 which extend in the first direction may be or include a conductive material such as polysilicon.

In the region between the second and third doping regions 5312 and 5313, the same structures as the structures between the first and second doping regions 5311 and 5312 may be provided. For example, in the region between the second and third doping regions 5312 and 5313, the plurality of dielectric material regions 5112 which extend in the first direction, the plurality of pillars 5113 which are sequentially arranged in the first direction and pass through the plurality of dielectric material regions 5112 in the second direction, the dielectric layer 5116 which is provided over the exposed surfaces of the plurality of dielectric material regions 5112 and the plurality of pillars 5113, and the plurality of conductive material regions 5212 to 5292 which extend in the first direction may be provided.

In the region between the third and fourth doping regions 5313 and 5314, the same structures as between the first and second doping regions 5311 and 5312 may be provided. For example, in the region between the third and fourth doping regions 5313 and 5314, the plurality of dielectric material regions 5112 which extend in the first direction, the plurality of pillars 5113 which are sequentially arranged in the first direction and pass through the plurality of dielectric material regions 5112 in the second direction, the dielectric layer 5116 which is provided over the exposed surfaces of the plurality of dielectric material regions 5112 and the plurality of pillars 5113, and the plurality of conductive material regions 5213 to 5293 which extend in the first direction may be provided.

Drains 5320 may be respectively provided over the plurality of pillars 5113. The drains 5320 may be silicon materials doped with second type impurities. The drains 5320 may be silicon materials doped with n-type impurities. While it is assumed for the sake of convenience that the drains 5320 include n-type silicon, it is to be noted that the drains 5320 are not limited to being n-type silicon. For example, the width of each drain 5320 may be larger than the width of each corresponding pillar 5113. Each drain 5320 may be provided in the shape of a pad over the top surface of each corresponding pillar 5113.

Conductive material regions 5331 to 5333 which extend in the third direction may be provided over the drains 5320. The conductive material regions 5331 to 5333 may be sequentially disposed in the first direction. The respective conductive material regions 5331 to 5333 may be electrically coupled with the drains 5320 of corresponding regions. The drains 5320 and the conductive material regions 5331 to 5333 which extend in the third direction may be electrically coupled with through contact plugs. The conductive material regions 5331 to 5333 which extend in the third direction may be a metallic material. The conductive material regions 5331 to 5333 which extend in the third direction may be a conductive material such as polysilicon.

In FIGS. 5 and 6, the respective pillars 5113 may form strings together with the dielectric layer 5116 and the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction. The respective pillars 5113 may form NAND strings NS together with the dielectric layer 5116 and the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction. Each NAND string NS may include a plurality of transistor structures TS.

FIG. 7 is a cross-sectional view of the transistor structure TS shown in FIG. 6.

Referring to FIG. 7, in the transistor structure TS shown in FIG. 6, the dielectric layer 5116 may include first to third sub dielectric layers 5117, 5118 and 5119.

The surface layer 5114 of p-type silicon in each of the pillars 5113 may serve as a body. The first sub dielectric layer 5117 adjacent to the pillar 5113 may serve as a tunneling dielectric layer, and may include a thermal oxidation layer.

The second sub dielectric layer 5118 may serve as a charge storing layer. The second sub dielectric layer 5118 may serve as a charge capturing layer, and may include a nitride layer or a metal oxide layer such as an aluminum oxide layer, a hafnium oxide layer, or the like.

The third sub dielectric layer 5119 adjacent to the conductive material 5233 may serve as a blocking dielectric layer. The third sub dielectric layer 5119 adjacent to the conductive material 5233 which extends in the first direction may be formed as a single layer or multiple layers. The third sub dielectric layer 5119 may be a high-k dielectric layer such as an aluminum oxide layer, a hafnium oxide layer, or the like, which has a dielectric constant greater than the first and second sub dielectric layers 5117 and 5118.

The conductive material 5233 may serve as a gate or a control gate. That is, the gate or the control gate 5233, the blocking dielectric layer 5119, the charge storing layer 5118, the tunneling dielectric layer 5117 and the body 5114 may form a transistor or a memory cell transistor structure. For example, the first to third sub dielectric layers 5117 to 5119 may form an oxide-nitride-oxide (ONO) structure. In the embodiment, for the sake of convenience, the surface layer 5114 of p-type silicon in each of the pillars 5113 will be referred to as a body in the second direction.

The memory block BLKi may include the plurality of pillars 5113. Namely, the memory block BLKi may include the plurality of NAND strings NS. In detail, the memory block BLKi may include the plurality of NAND strings NS which extend in the second direction or a direction perpendicular to the substrate 5111.

Each NAND string NS may include the plurality of transistor structures TS which are disposed in the second direction. At least one of the plurality of transistor structures TS of each NAND string NS may serve as a string source transistor SST. At least one of the plurality of transistor structures TS of each NAND string NS may serve as a ground select transistor GST.

The gates or control gates may correspond to the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction. In other words, the gates or the control gates may extend in the first direction and form word lines and at least two select lines, at least one source select line SSL and at least one ground select line GSL.

The conductive material regions 5331 to 5333 which extend in the third direction may be electrically coupled to one end of the NAND strings NS. The conductive material regions 5331 to 5333 which extend in the third direction may serve as bit lines BL. That is, in one memory block BLKi, the plurality of NAND strings NS may be electrically coupled to one bit line BL.

The second type doping regions 5311 to 5314 which extend in the first direction may be provided to the other ends of the NAND strings NS. The second type doping regions 5311 to 5314 which extend in the first direction may serve as common source lines CSL.

Namely, the memory block BLKi may include a plurality of NAND strings NS which extend in a direction perpendicular to the substrate 5111, e.g., the second direction, and may serve as a NAND flash memory block, for example, of a charge capturing type memory, in which a plurality of NAND strings NS are electrically coupled to one bit line BL.

While it is illustrated in FIGS. 5 to 7 that the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction are provided in 9 layers, it is to be noted that the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction are not limited to being provided in 9 layers. For example, conductive material regions which extend in the first direction may be provided in 8 layers, 16 layers or any multiple of layers. In other words, in one NAND string NS, the number of transistors may be 8, 16 or more.

While it is illustrated in FIGS. 5 to 7 that 3 NAND strings NS are electrically coupled to one bit line BL, it is to be noted that the embodiment is not limited to having 3 NAND strings NS that are electrically coupled to one bit line BL. In the memory block BLKi, m number of NAND strings NS may be electrically coupled to one bit line BL, m being a positive integer. According to the number of NAND strings NS which are electrically coupled to one bit line BL, the number of conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction and the number of common source lines 5311 to 5314 may be controlled as well.

Further, while it is illustrated in FIGS. 5 to 7 that 3 NAND strings NS are electrically coupled to one conductive material which extends in the first direction, it is to be noted that the embodiment is not limited to having 3 NAND strings NS electrically coupled to one conductive material which extends in the first direction. For example, n number of NAND strings NS may be electrically coupled to one conductive material which extends in the first direction, n being a positive integer. According to the number of NAND strings NS which are electrically coupled to one conductive material which extends in the first direction, the number of bit lines 5331 to 5333 may be controlled as well.

FIG. 8 is an equivalent circuit diagram illustrating the memory block BLKi having a first structure as described with reference to FIGS. 5 to 7.

Referring to FIG. 8, block BLKi, may have a plurality of NAND strings NS11 to NS31 between a first bit line BL1 and a common source line CSL. The first bit line BL1 may correspond to the conductive material region 5331 of FIGS. 5 and 6, which extends in the third direction. NAND strings NS12 to NS32 may be provided between a second bit line BL2 and the common source line CSL. The second bit line BL2 may correspond to the conductive material region 5332 of FIGS. 5 and 6, which extends in the third direction. NAND strings NS13 to NS33 may be provided between a third bit line BL3 and the common source line CSL. The third bit line BL3 may correspond to the conductive material region 5333 of FIGS. 5 and 6, which extends in the third direction.

A source select transistor SST of each NAND string NS may be electrically coupled to a corresponding bit line BL. A ground select transistor GST of each NAND string NS may be electrically coupled to the common source line CSL. Memory cells MC may be provided between the source select transistor SST and the ground select transistor GST of each NAND string NS.

In this example, NAND strings NS may be defined by units of rows and columns and NAND strings NS which are electrically coupled to one bit line may form one column. The NAND strings NS11 to NS31 which are electrically coupled to the first bit line BL1 may correspond to a first column, the NAND strings NS12 to NS32 which are electrically coupled to the second bit line BL2 may correspond to a second column, and the NAND strings NS13 to NS33 which are electrically coupled to the third bit line BL3 may correspond to a third column. NAND strings NS which are electrically coupled to one source select line SSL may form one row. The NAND strings NS11 to NS13 which are electrically coupled to a first source select line SSL1 may form a first row, the NAND strings NS21 to NS23 which are electrically coupled to a second source select line SSL2 may form a second row, and the NAND strings NS31 to NS33 which are electrically coupled to a third source select line SSL3 may form a third row.

In each NAND string NS, a height may be defined. In each NAND string NS, the height of a memory cell MC1 adjacent to the ground select transistor GST may have a value ‘1’. In each NAND string NS, the height of a memory cell may increase as the memory cell gets closer to the source select transistor SST when measured from the substrate 5111. For example, in each NAND string NS, the height of a memory cell MC6 adjacent to the source select transistor SST may be 7.

The source select transistors SST of the NAND strings NS in the same row may share the source select line SSL. The source select transistors SST of the NAND strings NS in different rows may be respectively electrically coupled to the different source select lines SSL1, SSL2 and SSL3.

The memory cells at the same height in the NAND strings NS in the same row may share a word line WL. That is, at the same height, the word lines WL electrically coupled to the memory cells MC of the NAND strings NS in different rows may be electrically coupled. Dummy memory cells DMC at the same height in the NAND strings NS of the same row may share a dummy word line DWL. Namely, at the same height or level, the dummy word lines DWL electrically coupled to the dummy memory cells DMC of the NAND strings NS in different rows may be electrically coupled.

The word lines WL or the dummy word lines DWL located at the same level or height or layer may be electrically coupled with one another at layers where the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction may be provided. The conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction may be electrically coupled in common to upper layers through contacts. At the upper layers, the conductive material regions 5211 to 5291, 5212 to 5292 and 5213 to 5293 which extend in the first direction may be electrically coupled. In other words, the ground select transistors GST of the NAND strings NS in the same row may share the ground select line GSL. Further, the ground select transistors GST of the NAND strings NS in different rows may share the ground select line GSL. That is, the NAND strings NS11 to NS13, NS21 to NS23 and NS31 to NS33 may be electrically coupled to the ground select line GSL.

The common source line CSL may be electrically coupled to the NAND strings NS. Over the active regions and over the substrate 5111, the first to fourth doping regions 5311 to 5314 may be electrically coupled. The first to fourth doping regions 5311 to 5314 may be electrically coupled to an upper layer through contacts and, at the upper layer, the first to fourth doping regions 5311 to 5314 may be electrically coupled.

For example, as shown in FIG. 8, the word lines WL of the same height or level may be electrically coupled. Accordingly, when a word line WL at a specific height is selected, all NAND strings NS which are electrically coupled to the word line WL may be selected. The NAND strings NS in different rows may be electrically coupled to different source select lines SSL. Accordingly, among the NAND strings NS electrically coupled to the same word line WL, by selecting one of the source select lines SSL1 to SSL3, the NAND strings NS in the unselected rows may be electrically isolated from the bit lines BL1 to BL3. In other words, by selecting one of the source select lines SSL1 to SSL3, a row of NAND strings NS may be selected. Moreover, by selecting one of the bit lines BL1 to BL3, the NAND strings NS in the selected rows may be selected in units of columns.

In each NAND string NS, a dummy memory cell DMC may be provided. In FIG. 8, the dummy memory cell DMC may be provided between a third memory cell MC3 and a fourth memory cell MC4 in each NAND string NS. That is, first to third memory cells MC1 to MC3 may be provided between the dummy memory cell DMC and the ground select transistor GST. Fourth to sixth memory cells MC4 to MC6 may be provided between the dummy memory cell DMC and the source select transistor SST. The memory cells MC of each NAND string NS may be divided into memory cell groups by the dummy memory cell DMC. In the divided memory cell groups, memory cells, for example, MC1 to MC3, adjacent to the ground select transistor GST may be referred to as a lower memory cell group, and memory cells, for example, MC4 to MC6, adjacent to the string select transistor SST may be referred to as an upper memory cell group.

Hereinbelow, detailed descriptions will be made with reference to FIGS. 9 to 11, which show a memory device in a memory system, according to another embodiment of the invention.

In particular, FIG. 9 is a perspective view schematically illustrating a memory device implemented with a three-dimensional (3D) nonvolatile memory device, which is different from the first structure described above with reference to FIGS. 5 to 8. FIG. 10 is a cross-sectional view illustrating the memory block BLKj taken along the line VII-VII′ of FIG. 9.

Referring to FIGS. 9 and 10, the memory block BLKj may include structures which extend in the first to third directions and may include a substrate 6311. The substrate 6311 may include a silicon material doped with a first type impurity. For example, the substrate 6311 may include a silicon material doped with a p-type impurity or may be a p-type well, for example, a pocket p-well, and include an n-type well which surrounds the p-type well. While it is assumed in the embodiment shown, that the substrate 6311 is p-type silicon, it is to be noted that the substrate 6311 is not limited to being p-type silicon.

First to fourth conductive material regions 6321 to 6324 which extend in the x-axis direction and the y-axis direction are provided over the substrate 6311. The first to fourth conductive material regions 6321 to 6324 may be separated by a predetermined distance in the z-axis direction.

Fifth to eighth conductive material regions 6325 to 6328 which extend in the x-axis direction and the y-axis direction may be provided over the substrate 6311. The fifth to eighth conductive material regions 6325 to 6328 may be separated by the predetermined distance in the z-axis direction. The fifth to eighth conductive material regions 6325 to 6328 may be separated from the first to fourth conductive material regions 6321 to 6324 in the y-axis direction.

A plurality of lower pillars DP which pass through the first to fourth conductive material regions 6321 to 6324 may be provided. Each lower pillar DP extends in the z-axis direction. Also, a plurality of upper pillars UP which pass through the fifth to eighth conductive material regions 6325 to 6328 may be provided. Each upper pillar UP extends in the z-axis direction.

Each of the lower pillars DP and the upper pillars UP may include an internal material 6361, an intermediate layer 6362, and a surface layer 6363. The intermediate layer 6362 may serve as a channel of the cell transistor. The surface layer 6363 may include a blocking dielectric layer, a charge storing layer and a tunneling dielectric layer.

The lower pillar DP and the upper pillar UP may be electrically coupled through a pipe gate PG. The pipe gate PG may be disposed in the substrate 6311. For instance, the pipe gate PG may include the same material as the lower pillar DP and the upper pillar UP.

A doping material 6312 of a second type which extends in the x-axis direction and the y-axis direction may be provided over the lower pillars DP. For example, the doping material 6312 of the second type may include an n-type silicon material. The doping material 6312 of the second type may serve as a common source line CSL.

Drains 6340 may be provided over the upper pillars UP. The drains 6340 may include an n-type silicon material. First and second upper conductive material regions 6351 and 6352 which extend in the y-axis direction may be provided over the drains 6340.

The first and second upper conductive material regions 6351 and 6352 may be separated in the x-axis direction. The first and second upper conductive material regions 6351 and 6352 may be formed of a metal. The first and second upper conductive material regions 6351 and 6352 and the drains 6340 may be electrically coupled through contact plugs. The first and second upper conductive material regions 6351 and 6352 respectively serve as first and second bit lines BL1 and BL2.

The first conductive material 6321 may serve as a source select line SSL, the second conductive material 6322 may serve as a first dummy word line DWL1, and the third and fourth conductive material regions 6323 and 6324 serve as first and second main word lines MWL1 and MWL2, respectively. The fifth and sixth conductive material regions 6325 and 6326 serve as third and fourth main word lines MWL3 and MWL4, respectively, the seventh conductive material 6327 may serve as a second dummy word line DWL2, and the eighth conductive material 6328 may serve as a drain select line DSL.

The lower pillar DP and the first to fourth conductive material regions 6321 to 6324 adjacent to the lower pillar DP form a lower string. The upper pillar UP and the fifth to eighth conductive material regions 6325 to 6328 adjacent to the upper pillar UP form an upper string. The lower string and the upper string may be electrically coupled through the pipe gate PG. One end of the lower string may be electrically coupled to the doping material 6312 of the second type which serves as the common source line CSL. One end of the upper string may be electrically coupled to a corresponding bit line through the drain 6340. One lower string and one upper string form one cell string which is electrically coupled between the doping material 6312 of the second type serving as the common source line CSL and a corresponding one of the upper conductive material layers 6351 and 6352 serving as the bit line BL.

That is, the lower string may include a source select transistor SST, the first dummy memory cell DMC1, and the first and second main memory cells MMC1 and MMC2. The upper string may include the third and fourth main memory cells MMC3 and MMC4, the second dummy memory cell DMC2, and a drain select transistor DST.

In FIGS. 9 and 10, the upper string and the lower string may form a NAND string NS, and the NAND string NS may include a plurality of transistor structures TS. Since the transistor structure included in the NAND string NS in FIGS. 9 and 10 is described above in detail with reference to FIG. 7, a detailed description thereof will be omitted herein.

FIG. 11 is a circuit diagram illustrating the equivalent circuit of the memory block BLKj having the second structure as described above with reference to FIGS. 9 and 10. For the sake of convenience, only a first string and a second string, which form a pair in the memory block BLKj in the second structure are shown.

Referring to FIG. 11, in the memory block BLKj having the second structure, cell strings each of which is implemented with one upper string and one lower string electrically coupled through the pipe gate PG as described above with reference to FIGS. 9 and 10, may be provided, in such a way as to define a plurality of pairs.

For example, in the certain memory block BLKj having the second structure, memory cells CG0 to CG31 stacked along a first channel CH1 (not shown), for example, at least one source select gate SSG1 and at least one drain select gate DSG1 may form a first string ST1, and memory cells CG0 to CG31 stacked along a second channel CH2 (not shown), for example, at least one source select gate SSG2 and at least one drain select gate DSG2 may form a second string ST2.

The first string ST1 and the second string ST2 may be electrically coupled to the same drain select line DSL and the same source select line SSL. The first string ST1 may be electrically coupled to a first bit line BL1, and the second string ST2 may be electrically coupled to a second bit line BL2.

While it is described in FIG. 11 that the first string ST1 and the second string ST2 are electrically coupled to the same drain select line DSL and the same source select line SSL, it may be envisaged that the first string ST1 and the second string ST2 may be electrically coupled to the same source select line SSL and the same bit line BL, the first string ST1 may be electrically coupled to a first drain select line DSL1 and the second string ST2 may be electrically coupled to a second drain select line DSL2. Further it may be envisaged that the first string ST1 and the second string ST2 may be electrically coupled to the same drain select line DSL and the same bit line BL, the first string ST1 may be electrically coupled to a first source select line SSL1 and the second string ST2 may be electrically coupled a second source select line SSL2.

FIG. 12 is a diagram illustrating a prefetch operation of the memory system 110 according to an embodiment of the present invention.

Referring to FIG. 12, the memory system 110 may perform a prefetch operation according to a pattern of access to the memory device 300 based on the addresses provided from the host 102 within a set input time interval.

In FIG. 12, circled numbers “4”, “1”, “9”, “8”, “2”, and 7 in respective nodes denote address values provided along with corresponding access commands, for example, program and read commands. In FIG. 12, arrows connecting two nodes of the addresses represent the input order of the access commands represented by the two addresses of the nodes. Hence, according to FIG. 12 addresses having the value “1”, “9”, or “8” are provided after the address having the value “4” is provided along with corresponding access commands. Likewise, FIG. 2 provides, that the address having the value “2” is provided along with corresponding access command after the address having the value “9” is provided along with corresponding access command, while the address having the value “7” is provided along with corresponding access command after an address having the value “8” is provided along with corresponding access command.

Furthermore, Indications “R1”, “R5W1”, “W4”, “R5W1”, “W4R1”, and so forth shown above the arrows represent access patterns (e.g., the type and the number) of access operations (e.g., the program and read operations) in response to corresponding access commands (e.g., the program and read commands) provided with the addresses at both nodes of each arrow within the set input time interval.

For example, indication “R5W1” shown above the arrow connecting the two nodes of the addresses of values “4” and “9” represents that five (5) read operations and one (1) program operation are performed according to the former address of the value “4” and then the read operation is performed according to the latter address of the value “9” after each of the five (5) read operations and one (1) program operation within the set input time interval.

For example, indication “R1” shown above the arrow connecting the two nodes of the addresses of values “4” and “1” represents that one (1) read operation is performed according to the former address of the value “4” and then the read operation is performed according to the latter address of the value “1” after the single read operation within the set input time interval.

For example, indication “W4” shown above the arrow connecting the two nodes of the addresses of values “4” and “8” represents that four (4) program operations are performed according to the former address of the value “4” and then the read operation is performed according to the latter address of the value “1” after each of the four (4) program operations within the set input time interval.

For example, indication “R4W1” shown above the arrow connecting the two nodes of the addresses of values “9” and “2” represents that four (4) read operations and one (1) program operation are performed according to the former address of the value “9” and then the read operation is performed according to the latter address of the value “2” after each of the four (4) read operations and one (1) program operation within the set input time interval.

For example, indication “R1W4” shown above the arrow connecting the two nodes of the addresses of values “8” and “7” represents that one (1) read operation and four (4) program operations are performed according to the former address of the value “8” and then the read operation is performed according to the latter address of the value “7” after each of the one (1) read operation and four (4) program operations within the set input time interval.

The set input time interval between the access operations corresponding to the pair of the former and latter addresses illustrated by both nodes of each arrow may vary according to system design.

According to an embodiment, the memory system 110 may perform a prefetch operation according to an access pattern to the memory device 300. For example, the memory system 110 may perform the prefetch operation according to an access pattern among a plurality of access patterns having a greater number of access operations performed than a reference number according to a former address between a pair of former and latter addresses within the set input time interval. The access patterns (i.e., “R1”, “R5W1”, “W4”, “R5W1”, “W4R1”, and so forth of FIG. 12) may be defined by the pair of the former and latter addresses inputted within the set input time interval, e.g., the pair of addresses <4, 1>, <4, 9>, <4, 8>, <9, 2>, and <8, 7> at both nodes of each arrows, for the example of FIG. 12.

For example, if the reference number for a program operation is set at four (4), the pair of former and latter addresses, between which four or more program operations are performed according to the former addresses within a set input time interval, may be set as a “program prefetch pattern”. Also, for example, when the reference number for a read operation is four (4), a pair of the former and latter addresses, between which four or more read operations are performed according to the former address within the set input time interval, may be set as a “read prefetch pattern.” The particular values of the reference number may vary according to the system design.

Hence, according to the example of FIG. 12, two (2) “program prefetch patterns” may be defined or set: the pair of the former and latter addresses of values “4” and “8” since four (4) program operations are performed according to the former address of the value “4” and then the read operation is performed according to the latter address of the value “1” after each of the four (4) program operations within the set input time interval; and the pair of the former and latter addresses of values “8” and “7” since four (4) program operations are performed according to the former address of the value “8” and then the read operation is performed according to the latter address of the value “7” after each of the four (4) program operations within the set input time interval.

Also, according to the example of FIG. 12, two (2) “read prefetch patterns” may be defined or set: the pair of the former and latter addresses of values “4” and “9” since five (5) read operations are performed according to the former address of the value “4” and then the read operation is performed according to the latter address of the value “9” after each of the five (5) read operations within the set input time interval; and the pair of the former and latter addresses of values “9” and “2” since four (4) read operations are performed according to the former address of the value “9” and then the read operation is performed according to the latter address of the value “2” after each of the four (4) read operations within the set input time interval.

In summary, the memory system 110 may set the access patterns (e.g., the pair of addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> in the example of FIG. 12), according to the number of performed access operations which are greater than the reference number (e.g., four as exemplified in the example of FIG. 12) of the access operations, among the access patterns defined by the pair of the former and latter addresses inputted within the set input time interval (e.g., the pair of addresses <4, 1>, <4, 9>, <4, 8>, <9, 2>, and <8, 7> at both nodes of each arrows exemplified in the example of FIG. 12), as the “program prefetch pattern” or the “read prefetch pattern” for the prefetch operation described below.

According to an embodiment, after setting of a “program prefetch pattern” or a “read prefetch pattern,” the memory system 110 may perform the prefetch operation by caching data of the memory device 300 into the memory cache 144 in advance for the read operation according to the latter one between the pair of the former and latter addresses set as the “program prefetch pattern” or the “read prefetch pattern” in the case of performing the access operation according to the former one of the pair of the former and latter addresses set as the “program prefetch pattern” or the “read prefetch pattern”.

For the example of FIG. 12, after the setting of the “program prefetch pattern” or the “read prefetch pattern”, the memory system 110 may perform the prefetch operation by caching in advance data for the read operation according to the latter ones of values “8”, “9”, “7”, and “2” between the pair of the former and latter addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> set as the “program prefetch pattern” or the “read prefetch pattern” in case of performing the access operation according to the former ones of values “4”, “4”, “8”, and “9” between the pair of the former and latter addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> set as the “program prefetch pattern” or the “read prefetch pattern”.

The prefetch operation may be performed during an idle state of the memory system 110 or the memory device 300.

Referring to FIG. 12, information of the “program prefetch pattern” and the “read prefetch pattern”, and the cached data by the prefetch operation may be stored in the memory cache 144.

For example, the memory cache 144 may store information of the “program prefetch pattern” and the “read prefetch pattern” represented by the pair of the former and latter addresses (e.g., the pair of addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> in the example of FIG. 12) and the data (e.g., “8DATA”, “9DATA”, “7DATA”, and “2DATA” in the example of FIG. 12) cached by the prefetch operation for the read command according to the latter ones of the pair of the former and latter addresses set as the “program prefetch pattern” or the “read prefetch pattern” (i.e., the latter ones of values “8”, “9”, “7”, and “2” between the pair of the former and latter addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> in the example of FIG. 12).

Accordingly, the memory system 110 may rapidly read from the memory cache 144 the data (e.g., “8DATA”, “9DATA”, “7DATA”, and “2DATA” in the example of FIG. 12) cached by the prefetch operation when the host 102 provides the read command along with the latter ones between the pair of the former and latter addresses set as the “program prefetch pattern” or the “read prefetch pattern” (i.e., the latter ones of values “8”, “9”, “7”, and “2” between the pair of the former and latter addresses <4, 8>, <4, 9>, <8, 7> and <9, 2> in the example of FIG. 12) due to the faster readout speed of the memory cache 144 than the memory device 300.

According to an embodiment, the memory system 110 may manage in the memory cache 144 a predetermined amount of information of the “program prefetch pattern” and the “read prefetch pattern” and the data cached by the prefetch operation according to weighted values of the “program prefetch pattern” and the “read prefetch pattern” in consideration of the storage capacity of the memory cache 144.

The weighted values of a “program prefetch pattern” and a “read prefetch pattern” may be determined based on one or more of the following factors: how frequently and/or how recently the “program prefetch pattern” and the “read prefetch pattern” are inputted within the set input time interval. For example, as a “program prefetch pattern” or a “read prefetch pattern” is inputted more frequently within a set input time interval, the corresponding weighted value becomes greater. Also, as a “program prefetch pattern” or a “read prefetch pattern” is inputted more recently within the set input time interval, the corresponding weighted value also increases. The weighted value of the “program prefetch pattern” and the “read prefetch pattern” may be determined based on factors other or in addition to the factors described above according to a system design.

According to an embodiment, the memory system 110 may remove from the memory cache 144 the information of the “program prefetch pattern” and the “read prefetch pattern” and the corresponding cached data, which are not inputted during a predetermined amount of time, in order to secure the storage capacity of the memory cache 144.

FIG. 13 is a diagram illustrating a prefetch operation of the memory system 110 shown in FIG. 12, according to an embodiment of the invention.

As shown in the embodiment of FIG. 13 a memory cache 144, which is an element of the controller 130 may be employed. However, the invention may also be implemented with a memory cache that is not part of the controller 130.

As described above with reference to FIG. 12, the controller 130 may perform the access operations in response to the access commands WT_CMD<1> and RD_CMD<2> provided along with a first address ADDR<1> and a second address ADDR<2>, and may set the first and second addresses ADDR<1:2> as one of the “program prefetch pattern” and the “read prefetch pattern” when the reference number or more of the access operations (e.g., four as exemplified in FIG. 12) are performed according to the former one of the first and second addresses ADDR<1:2> and then the read operation according to the latter one of the first and second addresses ADDR<1:2> after each of the access operations according to the former one of the first and second addresses ADDR<1:2> within the set input time interval within the set input time interval.

Also as described above with reference to FIG. 12, after the setting of the “program prefetch pattern” or the “read prefetch pattern” in relation with the first and second addresses ADDR<1:2>, the memory system 110 may perform the prefetch operation by caching in advance data PFDATA<2> for the read operation according to the latter one between the first and second addresses ADDR<1:2> set as the “program prefetch pattern” or the “read prefetch pattern” in case of performing the access operation according to the former one between the first and second addresses ADDR<1:2> set as the “program prefetch pattern” or the “read prefetch pattern”.

Accordingly, the memory system 110 may rapidly read from the memory cache 144 the data PFDATA<2> cached by the prefetch operation when the host 102 provides the read command along with the latter one between the first and second addresses ADDR<1:2> set as the “program prefetch pattern” or the “read prefetch pattern” due to the faster readout speed of the memory cache 144 than the memory device 300.

As described above with reference to FIG. 12, the controller 130 may perform the access operations in response to the access commands RD_CMD<2> and RD_CMD<4> provided along with a third address ADDR<3> and a fourth address ADDR<4>, and may set the third and fourth addresses ADDR<3:4> as one of the “program prefetch pattern” and the “read prefetch pattern” when the reference number or more of the access operations (e.g., four as exemplified in FIG. 12) are performed according to the former one of the third and fourth addresses ADDR<3:4> and then the read operation according to the latter one of the third and fourth addresses ADDR<3:4> after each of the access operations according to the former one of the third and fourth addresses ADDR<3:4> within the set input time interval within the set input time interval.

Also as described above with reference to FIG. 12, after the setting of the “program prefetch pattern” or the “read prefetch pattern” in relation with the third and fourth addresses ADDR<3:4>, the memory system 110 may perform the prefetch operation by caching in advance data PFDATA<4> for the read operation according to the latter one between the third and fourth addresses ADDR<3:4> set as the “program prefetch pattern” or the “read prefetch pattern” in case of performing the access operation according to the former one between the third and fourth addresses ADDR<3:4> set as the “program prefetch pattern” or the “read prefetch pattern”.

Accordingly, the memory system 110 may rapidly read from the memory cache 144 the data PFDATA<4> cached by the prefetch operation when the host 102 provides the read command along with the latter one between the third and fourth addresses ADDR<3:4> set as the “program prefetch pattern” or the “read prefetch pattern” due to the faster readout speed of the memory cache 144 than the memory device 300.

As described above with reference to FIG. 12, the controller 130 may remove from the memory cache 144 the information of the first and second addresses ADDR<1:2> set as the “program prefetch pattern” or the “read prefetch pattern” and the corresponding cached data PFDATA<2>, which are not inputted during the predetermined amount of time, in order to secure the storage capacity of the memory cache 144.

As described above with reference to FIG. 12, the controller 130 may manage in the memory cache 144 the predetermined amount of information of the “program prefetch pattern” and the “read prefetch pattern” and the data cached by the prefetch operation according to the weighted values of the “program prefetch pattern” and the “read prefetch pattern” in consideration of the storage capacity of the memory cache 144.

According to an embodiment, the controller 130 may perform the prefetch operation to overflowing data corresponding to one of the “program prefetch pattern” and the “read prefetch pattern” having the greatest weighted value among the “program prefetch patterns” and the “read prefetch patterns” beyond the storage capacity of the memory cache 144 by caching the overflowing data in the page buffer 320 of the memory device 300 in case of performing the access operation according to the former address of the “program prefetch pattern” or the “read prefetch pattern” having the greatest weighted value among the “program prefetch patterns” and the “read prefetch patterns” beyond the storage capacity of the memory cache 144. The overflow data cached in the page buffer 320 of the memory device 300 may be discarded when the next access command is not the read command according to the latter address of the “program prefetch pattern” or the “read prefetch pattern” having the greatest weighted value among the “program prefetch patterns” and the “read prefetch patterns” beyond the storage capacity of the memory cache 144.

In FIG. 13, indication “MD_CON” collectively represents the program and read operations of the memory device 300. Also, indication “MC_CON” collectively represents the control operation of the controller 130 to the memory device 300 for the program and read operations, and control operation of the controller 130 to the memory cache 144 such as performing the prefetch operation, the read operation and the delete operation to the cached data PFDATA<2> or PFDATA<4> of the memory cache 144.

According to an embodiment, the memory system 110 may set an access pattern having a number of performed access operations greater than a reference number, among the access patterns defined by the pair of the former and latter addresses inputted within the set input time interval, as the “program prefetch pattern” or the “read prefetch pattern” for the prefetch operation. Accordingly, the data for the “program prefetch pattern” or the “read prefetch pattern” cached in the memory cache through the prefetch operation may be rapidly accessed due to the faster readout speed of the memory cache than the memory device.

Although various embodiments have been described for illustrative purposes, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. 

What is claimed is:
 1. A memory system, comprising: a memory device of lower read operation speed; a memory cache of higher read operation speed; and a controller suitable for: setting at least one access pattern to the memory device defined by a pair of former and latter addresses provided to the memory system within a set input time interval as a prefetch pattern; performing a prefetch operation including caching data corresponding to the latter address from the memory device to the memory cache according to the prefetch pattern; and reading the cached data from the memory cache in response to a read command provided with the latter address of the prefetch pattern.
 2. The memory system of claim 1, wherein the prefetch pattern includes information denoting a number of access operations performed according to the former address that is greater than a reference number.
 3. The memory system of claim 2, wherein the access operation performed according to the former address is a program or a read operation.
 4. The memory system of claim 3, wherein each of the number of access operations performed according to the former address is followed by a read operation performed according to the latter address.
 5. The memory system of claim 1, wherein the controller performs the prefetch operation in case of performing an access operation according to the former address of the prefetch pattern.
 6. The memory system of claim 1, wherein the controller further stores the prefetch pattern in a page buffer of the memory device.
 7. The memory system of claim 6, wherein the controller stores the prefetch pattern according to a weighted value of the prefetch pattern.
 8. The memory system of claim 7, the weighted value of the prefetch pattern is determined on the basis of input frequency of the prefetch pattern.
 9. The memory system of claim 7, the weighted value of the prefetch pattern is determined on the basis of input recency of the prefetch pattern.
 10. The memory system of claim 6, wherein the controller further removes from the memory cache the prefetch pattern and the corresponding cached data, which are not provided during a predetermined amount of time.
 11. An operating method of a memory system comprising a memory device of lower read operation speed and a memory cache of higher read operation speed, the method comprising: setting at least one access pattern to the memory device defined by pairs of former and latter addresses provided to the memory system within a set input time interval as a prefetch pattern; performing a prefetch operation including caching data corresponding to the latter address from the memory device to the memory cache according to the prefetch pattern; and reading the cached data from the memory cache in response to a read command provided with the latter address of the prefetch pattern.
 12. The method of claim 11, wherein the prefetch pattern includes information of a number of access operations performed according to the former address greater than a reference number.
 13. The method of claim 12, wherein the access operation performed according to the former address is one of program and read operations.
 14. The method of claim 13, wherein each of the number of access operations performed according to the former address is followed by a read operation performed according to the latter address.
 15. The method of claim 11, wherein the prefetch operation is performed in case of performing an access operation according to the former address of the prefetch pattern.
 16. The method of claim 11, further comprising storing the prefetch pattern in a page buffer of the memory device.
 17. The method of claim 16, wherein the storing of the prefetch pattern is performed according to a weighted value of the prefetch pattern.
 18. The method of claim 17, the weighted value of the prefetch pattern is determined on the basis of input frequency of the prefetch pattern.
 19. The method of claim 17, the weighted value of the prefetch pattern is determined on the basis of input recency of the prefetch pattern.
 20. The method of claim 16, further comprising removing from the memory cache the prefetch pattern and the corresponding cached data, which are not provided during a predetermined amount of time. 